T. G. Yugova : rechercher sur Z-Library

physica status solidi (a)

Année:

2020

Langue:

english

Fichier:

PDF, 650 KB

english, 2020

Spin Quantum Beats in the Stokes Shifted Photoluminescence of InP Quantum Dots

I.A. Yugova, V.G. Davydov, I.Ya. Gerlovin, I.V. Ignatiev, I.E. Kozin, M. Sugisaki, Y. Masumoto

Journal:

Année:

2002

Langue:

english

Fichier:

PDF, 71 KB

english, 2002

Antiphase boundaries in GaAs layers on Si and Ge

V.I. Vdovin, M.G. Mil'vidskii, T.G. Yugova

Journal:

Journal of Crystal Growth

Année:

1993

Langue:

english

Fichier:

PDF, 1.02 MB

english, 1993

Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

V.I. Vdovin, M.G. Mil'vidskii, T.G. Yugova, K.L. Lyutovich, S.M. Saidov

Journal:

Journal of Crystal Growth

Année:

1994

Langue:

english

Fichier:

PDF, 1.41 MB

english, 1994

Misfit dislocation nucleation and multiplication in fully strained SiGe/Si heterostructures under thermal annealing

M. Rzaev, F. Schäffler, V. Vdovin, T. Yugova

Journal:

Materials Science in Semiconductor Processing

Année:

2005

Langue:

english

Fichier:

PDF, 327 KB

english, 2005

The influence of sapphire substrate orientation on crystalline quality of GaN films grown by hydride vapor phase epitaxy

Anatolij Govorkov, Alexsandr Donskov, Lev Diakonov, Yulia Kozlova, Sergej Malahov, Alexsandr Markov, Mikhail Mezhennyi, Vladimir Pavlov, Alexsandr Polykov, Tatiana Yugova

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 311 KB

english, 2009

Deep centers in bulk AlN and their relation to low-angle dislocation boundaries

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, T.G. Yugova, K.D. Scherbatchev, O.A. Avdeev, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, H. Helava, Yu.N. Makarov

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 252 KB

english, 2009

Quantum beats in semiconductor quantum dots

Yasuaki Masumoto, Ivan V. Ignatiev, Kazuhiro Nishibayashi, Tsuyoshi Okuno, Sergey Yu. Verbin, Irina A. Yugova

Journal:

Journal of Luminescence

Année:

2004

Langue:

english

Fichier:

PDF, 328 KB

english, 2004

Experimental demonstration of coherent coupling of two quantum dots

Gerhard Ortner, I. Yugova, A. Larionov, G. Baldassarri H.v.H., M. Bayer, P. Hawrylak, S. Fafard, Z. Wasilewski

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2005

Langue:

english

Fichier:

PDF, 231 KB

english, 2005

Optical generation of spin coherence in single-charged (In,Ga)As/GaAs self-assembled quantum dots

A. Greilich, R. Oulton, E.A. Zhukov, I.A. Yugova, D.R. Yakovlev, M. Bayer, A. Shabaev, Al.L. Efros, V. Stavarache, D. Reuter, A. Wieck

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2006

Langue:

english

Fichier:

PDF, 254 KB

english, 2006

Dislocation pattern formation in epitaxial structures based on SiGe alloys

T.G Yugova, V.I Vdovin, M.G Mil’vidskii, L.K Orlov, V.A Tolomasov, A.V Potapov, N.V Abrosimov

Journal:

Thin Solid Films

Année:

1998

Langue:

english

Fichier:

PDF, 257 KB

english, 1998

Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures

V.S Avrutin, N.F Izyumskaya, A.F Vyatkin, V.I Zinenko, Yu.A Agafonov, D.V Irzhak, D.V Roshchupkin, E.A Steinman, V.I Vdovin, T.G Yugova

Journal:

Materials Science and Engineering: B

Année:

2002

Langue:

english

Fichier:

PDF, 134 KB

english, 2002

Structural defects and dislocation-related photoluminescence in erbium-implanted silicon

N.A. Sobolev, A.M. Emel'yanov, E.I. Shek, V.I. Sakharov, I.T. Serenkov, Yu.A. Nikolaev, V.I. Vdovin, T.G. Yugova, M.I. Makovijchuk, E.O. Parshin, S. Pizzini

Journal:

Materials Science and Engineering: B

Année:

2002

Langue:

english

Fichier:

PDF, 128 KB

english, 2002

Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions

V.S. Avrutin, N.F. Izyumskaya, A.F. Vyatkin, V.I. Zinenko, Yu.A. Agafonov, D.V. Irzhak, D.V. Roshchupkin, E.A. Steinman, V.I. Vdovin, T.G. Yugova

Journal:

Materials Science and Engineering: B

Année:

2003

Langue:

english

Fichier:

PDF, 287 KB

english, 2003

Spin quantum beats in charged and neutral InP quantum dots

I.V. Ignatiev, T. Okuno, S.Yu. Verbin, I.A. Yugova, Y. Masumoto

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2003

Langue:

english

Fichier:

PDF, 85 KB

english, 2003

Effect of various factors upon the stoichiometry of GaAs homoepitaxial layers grown by LPE

A. V. Govorkov, A. G. Novikov, M. G. Milvidskii, A. A. Shlenskii, V. G. Fomin, T. G. Yugova

Journal:

physica status solidi (a)

Année:

1994

Langue:

english

Fichier:

PDF, 715 KB

english, 1994

Optical control of electron spin dynamics in self-assembled (In,Ga)As/GaAs quantum dots

A. Greilich, R. Oulton, E. A. Zhukov, I. A. Yugova, D. R. Yakovlev, M. Bayer, A. Shabaev, Al. L. Efros, V. Stavarache, D. Reuter, A. Wieck

Journal:

physica status solidi (b)

Année:

2006

Langue:

english

Fichier:

PDF, 265 KB

english, 2006

Spin relaxation in InP quantum dots

Y. Masumoto, I. Gerlovin, M. Ikezawa, I. Ignatiev, T. Okuno, S. Verbin, I. Yugova

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 111 KB

english, 2003

Thermally induced strain relaxation in SiGe/Si heterostructures with low-temperature buffer layers

V. I. Vdovin, T. G. Yugova, M. M. Rzaev, F. Schäffler, M.G. Mil'vidskii

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 307 KB

english, 2005

Electron spin coherence in singly charged (In,Ga)As/GaAs quantum dots

A. Greilich, R. Oulton, E. A. Zhukov, I. A. Yugova, D. R. Yakovlev, M. Bayer, A. Shabaev, Al. L. Efros, I. A. Merkulov, V. Stavarache, D. Reuter, A. Wieck

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 206 KB

english, 2006

A way to a single frequency precession of an inhomogeneous ensemble of electron spins in InGaAs quantum dots

A. Greilich, S. Spatzek, Al. L. Efros, I.A. Yugova, D.R. Yakovlev, D. Reuter, A.D. Wieck, M. Bayer

Journal:

M. V. Mezhennyi, M. G. Mil’vidskii, T. G. Yugova

Année:

2009

Langue:

english

Fichier:

PDF, 243 KB

english, 2009

Dislocation-related luminescence in Er-implanted silicon

N.A. Sobolev, O.B. Gusev, E.I. Shek, V.I. Vdovin, T.G. Yugova, A.M. Emel'yanov

Journal:

Journal of Luminescence

Année:

1998

Langue:

english

Fichier:

PDF, 191 KB

english, 1998

Influence of intrinsic point defects on the formation of structural defects and optically active centers during the annealing of erbium-and dysprosium-implanted silicon

N. A. Sobolev, E. I. Shek, A. M. Emel’yanov, V. I. Vdovin, T. G. Yugova

Journal:

Semiconductors

Année:

1999

Langue:

english

Fichier:

PDF, 57 KB

english, 1999

Effect of the composition of the solid solution on the high-temperature microhardness of SiGe heteroepitaxial layers grown on Ge and Si substrates

Journal:

Physics of the Solid State

Année:

2003

Langue:

english

Fichier:

PDF, 246 KB

english, 2003

Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ions

V. S. Avrutin, Yu. A. Agafonov, A. F. Vyatkin, V. I. Zinenko, N. F. Izyumskaya, D. V. Irzhak, D. V. Roshchupkin, É. A. Steinman, V. I. Vdovin, T. G. Yugova

Journal:

Semiconductors

Année:

2004

Langue:

english

Fichier:

PDF, 172 KB

english, 2004

Defect formation in Ge1−xSix/Ge(111) epitaxial heterostructures

T. G. Yugova, M. G. Mil’vidskii, V. I. Vdovin

Journal:

Physics of the Solid State

Année:

2004

Langue:

english

Fichier:

PDF, 408 KB

english, 2004

Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates

V. I. Vdovin, M. G. Mil’vidskii, T. G. Yugova

Journal:

T. G. Yugova, M. G. Mil’vidskii, M. M. Rzaev, F. Schäffler

Année:

2005

Langue:

english

Fichier:

PDF, 63 KB

english, 2005

Thermally stimulated relaxation of misfit strains in Si1−xGex/Si(100) heterostructures with different buffer layers

Journal:

Yu. N. Parkhomenko, A. A. Shlenskii, V. F. Pavlov, G. V. Shepekina, T. G. Yugova

Année:

2005

Langue:

english

Fichier:

PDF, 81 KB

english, 2005

X-ray diffraction determination of the composition of InxGa1 −xSb solid solution

Journal:

Inorganic Materials

Année:

2010

Langue:

english

Fichier:

PDF, 152 KB

english, 2010

Quantum beats of fine-structure states in InP quantum dots

I. Ya. Gerlovin, I. V. Ignatĭev, I. A. Yugova, Y. Masumoto

Journal:

Optics and Spectroscopy

Année:

2008

Langue:

english

Fichier:

PDF, 332 KB

english, 2008

Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride

A. V. Govorkov, A. Ya. Polyakov, T. G. Yugova, N. B. Smirnov, E. A. Petrova, M. V. Mezhennyi, A. V. Markov, I. -H. Lee, S. J. Pearton

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Année:

2007

Langue:

english

Fichier:

PDF, 329 KB

english, 2007

Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy

A. A. Donskov, L. I. Dyakonov, Yu. P. Kozlova, S. S. Malakhov, M. V. Mezhennyi, V. F. Pavlov, T. G. Yugova

Journal:

Saulute Budriene, Natalija Gorochovceva, Tatjana Romaskevic, Lyubov V. Yugova, Aldona Miezeliene, Gervydas Dienys, Asta Zubriene

Année:

2011

Langue:

english

Fichier:

PDF, 1.64 MB

english, 2011

β-Galactosidase fromPenicillium canescens. Properties and immobilization

Journal:

Central European Journal of Chemistry

Année:

2005

Langue:

english

Fichier:

PDF, 340 KB

english, 2005

Investigation of the formation of transition layers during LPE growth of GaAs

A. S. Bruk, Dr. A. V. Govorkov, M. G. Milvidskii, E. V. Popova, A. A. Shlenskii, T. G. Yugova

Journal:

Scanning

Année:

1993

Langue:

english

Fichier:

PDF, 374 KB

english, 1993

Extended defects in Si wafers implanted with ions of rare-earth elements

V.I. Vdovin, T.G. Yugova, N.A. Sobolev, E.I. Shek, M.I. Makovijchuk, E.O. Parshin

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

1999

Langue:

english

Fichier:

PDF, 197 KB

english, 1999

Determination of the types and densities of dislocations in GaN epitaxial layers of different thicknesses by optical and atomic force microscopy

K. S. Kravchuk, M. V. Mezhennyi, T. G. Yugova

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 1.58 MB

english, 2012

Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: Resonant spin amplification versus spin mode locking

Yugova, I. A., Glazov, M. M., Yakovlev, D. R., Sokolova, A. A., Bayer, M.

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 2.29 MB

english, 2012

Hole spin precession in a (In,Ga)As quantum dot ensemble: From resonant spin amplification to spin mode locking

Varwig, S., Schwan, A., Barmscheid, D., Müller, C., Greilich, A., Yugova, I. A., Yakovlev, D. R., Reuter, D., Wieck, A. D., Bayer, M.

Journal:

Année:

2012

Langue:

english

Fichier:

PDF, 649 KB

english, 2012

quantum wells

Yugova, I. A., Greilich, A., Yakovlev, D. R., Kiselev, A. A., Bayer, M., Petrov, V. V., Dolgikh, Yu. K., Reuter, D., Wieck, A. D.

Journal:

Yugova, I. A., Glazov, M. M., Ivchenko, E. L., Efros, Al. L.

Année:

2007

Langue:

english

Fichier:

PDF, 237 KB

english, 2007

Pump-probe Faraday rotation and ellipticity in an ensemble of singly charged quantum dots

Journal:

Mezhennyi, M V, Mil vidskii, M G, Yugova, T G

Année:

2009

Langue:

english

Fichier:

PDF, 1.09 MB

english, 2009

High-temperature microhardness of SiGe epitaxial layers grown on Ge and Si substrates

Journal:

Journal of Physics Condensed Matter

Année:

2002

Langue:

english

Fichier:

PDF, 162 KB

english, 2002

Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask

Polyakov, A. Y., Markov, A. V., Mezhennyi, M. V., Govorkov, A. V., Pavlov, V. F., Smirnov, N. B., Donskov, A. A., D’yakonov, L. I., Kozlova, Y. P., Malakhov, S. S., Yugova, T. G., Osinsky, V. I., Goro

Journal:

Applied Physics Letters

Année:

2009

Langue:

english

Fichier:

PDF, 405 KB

english, 2009

Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Yugova, T. G., Cox, H., Usikov, A. S., Helava, H., Makarov, Yu.

Journal:

Journal of Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2014

[IEEE 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 - Alpbach, Austria (17-22 Sept. 2000)] 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) - Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers

Vyarkin, A.F., Avrutin, V.S., Izyumskaya, N.F., Egorov, V.K., Starkov, V.V., Zinenko, V.I., Smirnova, I.A., Hemment, P.L.F., Nejim, A., Vdovin, V.I., Yugova, T.G.

Année:

2000

Langue:

english

Fichier:

PDF, 349 KB

english, 2000

Access to long-term optical memories using photon echoes retrieved from semiconductor spins

Langer, L., Poltavtsev, S. V., Yugova, I. A., Salewski, M., Yakovlev, D. R., Karczewski, G., Wojtowicz, T., Akimov, I. A., Bayer, M.

Journal:

Nature Photonics

Année:

2014

Langue:

english

Fichier:

PDF, 1.49 MB

english, 2014

Effect of pump-probe detuning on the Faraday rotation and ellipticity signals of mode-locked spins in (In,Ga)As/GaAs quantum dots

Glazov, M. M., Yugova, I. A., Spatzek, S., Schwan, A., Varwig, S., Yakovlev, D. R., Reuter, D., Wieck, A. D., Bayer, M.

Journal: